Direct determination of atomic structure in multiple quantum wells InGaN/GaN
Identifieur interne : 00E562 ( Main/Repository ); précédent : 00E561; suivant : 00E563Direct determination of atomic structure in multiple quantum wells InGaN/GaN
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Abstract
We present an analysis of a homogeneous cellular interface between ultrathin InGaN and GaN layers in a high-resolution high-angle annular dark field scanning transmission electron microscopy image processed by the deconvolution technique. The method provides high-quality atomic-resolved images uniquely from the experimental images without preassumed models and image simulations. The processed image, then, shows definitely the position of interface between InGaN and GaN layers at atomic scale and an evidence of coherent epitaxial growth. © 2002 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Direct determination of atomic structure in multiple quantum wells InGaN/GaN</title><author><name sortKey="Watanabe, K" uniqKey="Watanabe K">K. Watanabe</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Tokyo Metropolitan College of Technology, 1-10-40 Higashioi, Tokyo 140-0011, Japan</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">Japon</country><wicri:regionArea>Tokyo Metropolitan College of Technology, 1-10-40 Higashioi, Tokyo 140-0011</wicri:regionArea><placeName><settlement type="city">Tokyo</settlement></placeName></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Institute of Materials Science and Engineering, National Taiwan University, Taipei 106, Taiwan</s1></inist:fA14><country xml:lang="fr">République de Chine (Taïwan)</country><wicri:regionArea>Institute of Materials Science and Engineering, National Taiwan University, Taipei 106</wicri:regionArea><wicri:noRegion>Taipei 106</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Physics, Tokyo University of Science, Tokyo 162-8601, Japan</s1></inist:fA14><country xml:lang="fr">Japon</country><wicri:regionArea>Department of Physics, Tokyo University of Science, Tokyo 162-8601</wicri:regionArea><placeName><settlement type="city">Tokyo</settlement></placeName></affiliation><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>FEI Company Japan, Ltd. NSS-II Bldg. 13-34, Tokyo 108-8509, Japan</s1></inist:fA14><country xml:lang="fr">Japon</country><wicri:regionArea>FEI Company Japan, Ltd. NSS-II Bldg. 13-34, Tokyo 108-8509</wicri:regionArea><placeName><settlement type="city">Tokyo</settlement></placeName></affiliation></author><author><name sortKey="Yang, Jer Ren" uniqKey="Yang J">Jer-Ren Yang</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Tokyo Metropolitan College of Technology, 1-10-40 Higashioi, Tokyo 140-0011, Japan</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">Japon</country><wicri:regionArea>Tokyo Metropolitan College of Technology, 1-10-40 Higashioi, Tokyo 140-0011</wicri:regionArea><placeName><settlement type="city">Tokyo</settlement></placeName></affiliation></author><author><name sortKey="Nakanishi, N" uniqKey="Nakanishi N">N. Nakanishi</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Tokyo Metropolitan College of Technology, 1-10-40 Higashioi, Tokyo 140-0011, Japan</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">Japon</country><wicri:regionArea>Tokyo Metropolitan College of Technology, 1-10-40 Higashioi, Tokyo 140-0011</wicri:regionArea><placeName><settlement type="city">Tokyo</settlement></placeName></affiliation></author><author><name sortKey="Inoke, K" uniqKey="Inoke K">K. Inoke</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Tokyo Metropolitan College of Technology, 1-10-40 Higashioi, Tokyo 140-0011, Japan</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">Japon</country><wicri:regionArea>Tokyo Metropolitan College of Technology, 1-10-40 Higashioi, Tokyo 140-0011</wicri:regionArea><placeName><settlement type="city">Tokyo</settlement></placeName></affiliation></author><author><name sortKey="Shiojiri, M" uniqKey="Shiojiri M">M. Shiojiri</name></author></titleStmt><publicationStmt><idno type="inist">02-0091427</idno><date when="2002-02-04">2002-02-04</date><idno type="stanalyst">PASCAL 02-0091427 AIP</idno><idno type="RBID">Pascal:02-0091427</idno><idno type="wicri:Area/Main/Corpus">00FD44</idno><idno type="wicri:Area/Main/Repository">00E562</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Deconvolution</term><term>Experimental study</term><term>Gallium compounds</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Interface structure</term><term>Scanning transmission electron microscopy</term><term>Semiconductor quantum wells</term><term>Semiconductor superlattices</term><term>Wide band gap semiconductors</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>6865C</term><term>6835C</term><term>6837L</term><term>Etude expérimentale</term><term>Indium composé</term><term>Gallium composé</term><term>Semiconducteur III-V</term><term>Semiconducteur bande interdite large</term><term>Puits quantique semiconducteur</term><term>Superréseau semiconducteur</term><term>Structure interface</term><term>Microscopie électronique balayage transmission</term><term>Déconvolution</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We present an analysis of a homogeneous cellular interface between ultrathin InGaN and GaN layers in a high-resolution high-angle annular dark field scanning transmission electron microscopy image processed by the deconvolution technique. The method provides high-quality atomic-resolved images uniquely from the experimental images without preassumed models and image simulations. The processed image, then, shows definitely the position of interface between InGaN and GaN layers at atomic scale and an evidence of coherent epitaxial growth. © 2002 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>80</s2></fA05><fA06><s2>5</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Direct determination of atomic structure in multiple quantum wells InGaN/GaN</s1></fA08><fA11 i1="01" i2="1"><s1>WATANABE (K.)</s1></fA11><fA11 i1="02" i2="1"><s1>YANG (Jer-Ren)</s1></fA11><fA11 i1="03" i2="1"><s1>NAKANISHI (N.)</s1></fA11><fA11 i1="04" i2="1"><s1>INOKE (K.)</s1></fA11><fA11 i1="05" i2="1"><s1>SHIOJIRI (M.)</s1></fA11><fA14 i1="01"><s1>Tokyo Metropolitan College of Technology, 1-10-40 Higashioi, Tokyo 140-0011, Japan</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="02"><s1>Institute of Materials Science and Engineering, National Taiwan University, Taipei 106, Taiwan</s1></fA14><fA14 i1="03"><s1>Department of Physics, Tokyo University of Science, Tokyo 162-8601, Japan</s1></fA14><fA14 i1="04"><s1>FEI Company Japan, Ltd. NSS-II Bldg. 13-34, Tokyo 108-8509, Japan</s1></fA14><fA14 i1="05"><s1>Department of Anatomy, Kanazawa Medical University, Ishikawa 920-0293, Japan</s1><sZ>5 aut.</sZ></fA14><fA14 i1="06"><s1>Kyoto Institute of Technology, Kyoto 606-8585, Japan</s1><sZ>5 aut.</sZ></fA14><fA20><s1>761-762</s1></fA20><fA21><s1>2002-02-04</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 2002 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>02-0091427</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>We present an analysis of a homogeneous cellular interface between ultrathin InGaN and GaN layers in a high-resolution high-angle annular dark field scanning transmission electron microscopy image processed by the deconvolution technique. The method provides high-quality atomic-resolved images uniquely from the experimental images without preassumed models and image simulations. 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